Scientific AchievementMBE growth and donor doping of coherent ultrawide bandgap AlGaN on bulk AlN substrates.
Significance and ImpactExplore fundamental limits of defect control in AlN (an Ultra material).
Scientific AchievementP-diamond for next generation 10kV power electronics.
Significance and ImpactGa2O3 is presently being developed as low-cost material for next generation power electronics. However, it is limited by the inability of p-doping and a low thermal conductivity. A new device concept of integrating p-type diamond (ULTRA material) with Ga2O3 solves this issue.
Scientific AchievementTime to breakdown of WBG and UWBG devices can be measured with resolutions ~100ps
Significance and ImpactThis can be used to determine the physics behind high field breakdown and elucidate fundamental mechanisms (e.g. band-to-band vs defect-assisted)
Scientific AchievementAssessment of the impact of the measured and theoretical transport properties of UWBG materials to figures of merit (FOM) relevant to power electronics
Significance and ImpactUWBG materials hold the promise of increasing the efficiency and decreasing footprint of the grid components. Co-design methodology used to assess critical material properties impact system performance