Highlights

Highlight given by Grace Xing

Cornell University

Scientific Achievement

MBE growth and donor doping of coherent ultrawide bandgap AlGaN on bulk AlN substrates.

Significance and Impact

Explore fundamental limits of defect control in AlN (an Ultra material).

Highlight given by Martin Kuball

University of Bristol

Scientific Achievement

P-diamond for next generation 10kV power electronics.

Significance and Impact

Ga2O3 is presently being developed as low-cost material for next generation power electronics. However, it is limited by the inability of p-doping and a low thermal conductivity. A new device concept of integrating p-type diamond (ULTRA material) with Ga2O3 solves this issue.

Highlight given by Jack Flicker

Sandia National Laboratories

Scientific Achievement

Time to breakdown of WBG and UWBG devices can be measured with resolutions ~100ps

Significance and Impact

This can be used to determine the physics behind high field breakdown and elucidate fundamental mechanisms (e.g. band-to-band vs defect-assisted)

Highlight given by Stephen Goodnick

Arizona State University

Scientific Achievement

Assessment of the impact of the measured and theoretical transport properties of UWBG materials to figures of merit (FOM) relevant to power electronics

Significance and Impact

UWBG materials hold the promise of increasing the efficiency and decreasing footprint of the grid components. Co-design methodology used to assess critical material properties impact system performance