Houqiang Fu

Houqiang Fu

Arizona State University

Prof. Fu received the PhD degree in Electrical Engineering from Arizona State University (ASU) in 2019, and the BS degree in Materials Physics from Wuhan University, China in 2014. Prior to joining ASU, he was an Assistant Professor in the Department of Electrical and Computer Engineering at Iowa State University. Prof. Fu’s research focuses on third-generation wide/ultrawide bandgap semiconductor materials and devices for applications in electronics and photonics. He won the 2021 ISU Regents Innovation Fund Award, the 2019 Palais Outstanding Doctoral Award (the highest honor for ASU ECEE PhD graduates) and the 2018 ASU Outstanding Research Award. His work has been chronicled in over 160 journal and conference publications, 4 book chapters, and 11 patents. His research has been featured by many media outlets including IEEE Spectrum, Semiconductor Today, Compound Semiconductor, Silicon Valley Microelectronics