Mohamadali Malakoutian

Mohamadali Malakoutian

Stanford University
Research Thrust(s):

Mohamadali is an experienced postdoctoral researcher at Stanford University with a demonstrated history of working in high-power high-frequency transistors, all-diamond diodes, and diamond integration for thermal management, III-V wide bandgap semiconductors, integrated microsystems including MEMS/NEMS devices, and microfluidic channels. He is an expert in fab process design-integration, process and device modeling (Athena, Atlas), thin-film deposition techniques (Evaporation, Sputtering, PVD, ALD, and PECVD), dry etching (ICP/RIE etching of Diamond, AlN, SiN, Al2O3, SiO2), wet etching (bulk Si micromachining), and single-crystalline/polycrystalline diamond growth. He is currently working on the growth, fabrication, and characteristics of GaN HEMTs with diamond integrated for thermal management to solve the self-heating problem of mm-wave devices.