Dr. Takuya Maeda received his PhD degree in March 2020 from Kyoto University, Japan. His research interests are focusing on wide-bandgap (WBG) semiconductors (GaN, SiC, Ga2O3, AlN), their heterostructure with new functional materials, and their application to future electronic devices. He has experience and expertise in characterization of avalanche breakdown, Schottky/p-n junctions, and Franz-Keldysh effect in WBG semi-conductors.