Xiang Zheng is a research associate in Center for Device Thermography and Reliability (CDTR) at the University of Bristol. He got a PhD degree from Beijing University of Technology in 2020. His PhD research included the trapping effect in GaN-based HEMTs and the temperature measurement of wide bandgap semiconductors. His current research interests are the transport and thermal management of ultra-wide bandgap electronic materials and devices. Xiang received the China National Scholarship for PhD students in 2016 and 2018. He has published over ten papers about the reliability issues of GaN-based HEMTs.