Subhajit Ghosh is a research engineer at the University of California Los Angeles. He obtained his Ph.D. in Electrical Engineering from the University of California Riverside in 2022, where his research focused on studying the electrical and low-frequency noise characteristics of advanced emerging materials and devices. Currently, at Ultra, Subhajit is involved in conducting comparative studies on the noise behavior of ultra-wideband gap semiconductor devices.

Harshad received his M.S. degree in Electrical Engineering from Arizona State University in 2016 with a thesis topic on 2DEG and parametric applications of kinetic inductance. He is now a PhD student with Dr. Stephen Goodnick working on diamond physics. His research focus is developing diamond devices for high power, high frequency and extreme environment applications. His expertise involves semiconductor characterization, device simulations and modelling and process development.

Whilst at the University of Bristol studying for an MSci in chemistry it became clear to me that my interests lay in physical chemistry. As part of my undergraduate degree, I carried out a final year project in the Bristol University Diamond Group with Professor Paul May. This was spent looking at diamond as a material for thermionic emission. Carrying out this project gave me an insight into the capabilities of diamond which resulted in a desire to study it further a learn more about the variety of possible applications.

Mohamadali is an experienced postdoctoral researcher at Stanford University with a demonstrated history of working in high-power high-frequency transistors, all-diamond diodes, and diamond integration for thermal management, III-V wide bandgap semiconductors, integrated microsystems including MEMS/NEMS devices, and microfluidic channels. He is an expert in fab process design-integration, process and device modeling (Athena, Atlas), thin-film deposition techniques (Evaporation, Sputtering, PVD, ALD, and PECVD), dry etching (ICP/RIE etching of Diamond, AlN, SiN, Al2O3, SiO2), wet etching (bulk Si micromachining), and single-crystalline/polycrystalline diamond growth. He is currently working on the growth, fabrication, and characteristics of GaN HEMTs with diamond integrated for thermal management to solve the self-heating problem of mm-wave devices.

Andrew Binder (PhD '19 - University of Central Florida) is a Senior Member of Technical Staff at Sandia National Laboratories. His research is focused on the development of vertical GaN (vGaN) power devices. At Sandia, Andrew leads a small fab team developing vGaN JBS and MOSFET devices. Under his leadership, this fab team has successfully demonstrated the 1st vGaN trench MOSFETs at Sandia. For the ULTRA EFRC, his focus is on the physics and modeling of breakdown for wide and ultrawide bandgap power devices.